1 - 2 ? 2000 ixys all rights reserved features ? international standard packages minibloc, with aluminium nitride isolation low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers temperature and lighting controls advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 200 v v gh(th) v ds = v gs , i d = 8 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 i d25 10 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability 180 a i l(rms) terminal current limit 100 a i dm t c = 25 c, pulse width limited by t jm 720 a i ar t c = 25 c36a e ar t c = 25 c64mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g 98551b (7/00) d s s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source ixfn 180n20 v dss = 200 v i d25 = 180 a r ds(on) = 10 m t rr < 250 ns ixys reserves the right to change limits, test conditions, and dimensions. preliminary data hiperfet tm power mosfets single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr
2 - 2 ? 2000 ixys all rights reserved ixfn 180n20 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 60a, pulse test 90 130 s c iss 22000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 3800 pf c rss 600 pf t d(on) 55 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 85 ns t d(off) r g = 1 (external), 180 ns t f 56 ns q g(on) 660 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 120 nc q gd 270 nc r thjc 0.18 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 180 a i sm repetitive; 720 a pulse width limited by t jm v sd i f = 100a, v gs = 0 v, 1.2 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 50a, -di/dt = 100 a/ s, v r = 100 v t j = 25 c 250 ns q rm t j = 25 c 1.5 c i rm 10 a m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
|
